ST8000-DLXn Spec.


1. Overview
: The System can accommodate a wide range of materials 
and process from odd sized substrates, Piece to 8¡± 
with UV or Deep UV Exposure. The MDA-8000B_DUV is being 
successfully used in the Manufacturing of Semiconductors, 
Opto Electronics, Flat Panel, RF Microwave, Diffractive Optics, 
Mems, Bump or Flip chip devices and other Technologies 
requiring fine geometry printing & precision Alignment.

2. Module
Mask Aligner & UV Source Module:1 qty
Exposure system	Wafer stage Module:1
Microscope with CCD camera:1 set
CCD Bottom side align:1 set
Monitor:1
Mask Holder:1
Sample chuck:1
DUV lamp power supply:1
1KW DUV Lamp:2
PC:1
Anti-vibration table:1
Oil-less Vacuum Pump	1


3. Specification

¡Ü Standard Feature
¢Å Wafer stage								
Substrate Size :Up to 8¡±				
Chuck	size :Up to 8¡±	                       
Movement		
X: ¡¾5 mm
Y: ¡¾5 mm
Z: 15 mm				
¥È: ¡¾3¡Æ
Alignment accuracy TSA : < ¡¾1 um, BSA : < ¡¾3 um 
Wafer to mask gap Auto wedge compensation
Vibration protection Mounted on anti-vibration table
Z-Axis Moving Motorizing
¥È -Axis Moving Motorizing
Oil-less Vacuum Pump

¢Å Mask stage
Mask size :Up to 9¡±	
Mask holding type :Vacuum * clip
Proximity Gap ball :2 ¨ª ( 3 ea )

¢Å UV source	
UV lamp 		1KW DUV
Uniform beam size	8.25¡° X 8.25¡°
Exposure mode		Pressure ( Hard, Soft ) / Vacuum / Proximity
Exposure time control	Changeable 
Exposure timer		1 ~ 999.9 sec
Beam Intensity 	365nm Max. Intensity : 15~20 mw/cm2
248nm Max. Intensity : 10~12 mw/cm2
Wavelength           NUV 350nm ~ 450nm
Beam Uniformity       ¡Â ¡¾5%



¢Å Microscope	
Type	 		Dual CCD zoom Microscope 
Monitor		        17¡± LCD Monitor 
Video mode		Single and split field
Magnification		80x ~ 1,000x			 
Focus			Manual				
Objective spacing	Variable (25mm ~ 200mm)
Angle prism           
Working distance       86 mm / 32 mm
Field of View          6,9 mm ~ 0.03 mm
Depth of Field         2.98 mm ~ 0.03 mm
		

¢Å Bottom Side Alignment
 Bottom Side CCD microscope Set
 Motorizing Control     Dual X,Y,Z Motion
 Objective spacing       80 ~ 100 ( @ 6inch wafer chuck )
 Magnification          400x
 Working distance      25 mm 
 Image capture
 Align accuracy        <¡¾ 3 um

¢Å Control system
PC & PLC Controller

¢Å Mask ( User Spec )
Pattern shape	:User Spec
Mask thickness 	:User Spec
Size: up to 9¡± Mask

¢Å Resolution	
Vacuum Contact	1um ( Thin PR@Si Wafer )
Hard Contact	        2 um
Soft contact            3 um			
20 um Proximity 	5um 

¢Å Lamp 							
Uniformity: 5 ~ 9 Point Standard	
Idle Power:750mw
Power Mode:CP (Constant Power) & CI (Constant Intensity)

4. Utility

1)Dimension(mm) : 810mm*980mm*1800mm[W*D*H]
2)Electric Power : 220V, 30Amp, 50/60Hz, 1 Phase 
3)N2 : More than 3kg/cm2 ( 40 psi ), Flow rate 5 Liter/min
       Out side diameter 6 mm Tube
4)Air : More than 6kg/cm2 ( 80 psi ), Flow rate 10 Liter/min
       Out side diameter 6 mm Tube
5)Vacuum: ¡Ã 600mmHg, ( Vacuum pump include )           
6)Exhuast: Lamp House Cooling
?	Flexible Duct Al hose inside diameter 100mm
?	Flow rate 10 Liter/min
7)Weight : Equipment : 600 kg
           With Packing : 800 kg






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